Density                           4.22 g/cm2

Melting Point                   1810 ± 25℃

Orientation                     a-cut crystalline direction (+/-5℃)

Wavefront distortion        <λ/8 at 633nm

Surface quality               better than 20/10 Scratch/Dig

Parallelism                     < 10 arc seconds

Perpendicularity             < 5 arc minutes

Surface flatness             <λ/10 at 632.8nm

Chamfer                       0.15x45o

Nd:YVO4 is one of the most efficient laser host crystal currently existing for diode laser-pumped solid-state lasers. Nd:YVO4 is an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers. Nd:YVO4 can produce powerful and stable IR, green, blue lasers with the design of Nd:YVO4 and frequency doubling crystals. For the applications in which more compact design and the single-longitudinal-mode output are needed, Nd:YVO4 shows its particular advantages over other commonly used laser crystals.

Advantages of Nd:YVO4

•  Low lasing threshold and high slope efficiency

•  Large stimulated emission cross-section at lasing wavelength

•  High absorption over a wide pumping wavelength bandwidth

•  Optically uniaxial and large birefringence emits polarized laser

•  Low dependency on pumping wavelength and tend to single mode output

Basic Properties

Atomic Density

~1.37x1020 atoms/cm2

Crystal Structure

Zircon Tetragonal, space group D4h, a=b=7.118, c=6.293


4.22 g/cm2

Mohs Hardness

Glass-like, 4.6 ~ 5

Thermal Expansion Coefficient


Melting Point

1810 ± 25℃

Lasing Wavelengths

914nm, 1064 nm, 1342 nm

Thermal Optical Coefficient

dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K

Stimulated Emission Cross-Section

25.0x10-19 cm2 , @1064 nm

Fluorescent Lifetime

90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm

Absorption Coefficient

31.4 cm-1 @ 808 nm

Absorption Length

0.32 mm @ 808 nm

Intrinsic Loss

Less 0.1% cm-1 , @1064 nm

Gain Bandwidth

0.96 nm (257 GHz) @ 1064 nm

Polarized Laser Emission

parallel to optic axis (c-axis)

Diode Pumped Optical to Optical Efficiency

> 60%

Sellmeier Equation (for pure YVO4 crystals)

no2(λ) =3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2
no2(λ) =4.59905+0.110534/(λ2 - 0.04813) - 0.0122676λ2

Technical Parameters

Nd dopant concentration

0.2 ~ 3 atm%

Dopant tolerance

within 10% of concentration


 0.02 ~ 20mm

Coating specification

AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95%
HR @ 1064nm, R>99.8% & HT@ 808nm, T>9%
HR @ 1064nm, R>99.8%, HR @ 532 nm, R>99% & HT @ 808 nm, T>95%


a-cut crystalline direction (+/-5℃)

Dimensional tolerance

+/-0.1mm(typical), High precision +/-0.005mm can be available upon request.

Wavefront distortion

<λ/8 at 633nm

Surface quality

better than 20/10 Scratch/Dig per MIL-O-1380A


< 10 arc seconds


< 5 arc minutes

Surface flatness

<λ/10 at 632.8nm

Clear aperture

Central 95%



Damage threshold

over 15J/cm2 (rods without coating) over 700 MW/cm2 (coating)