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XY062-1060-R8B

This product is 0.4~1.1μm wavelength optical signal excellent detector, it has N + P-π P + access type structure, both high sensitivity, high speed response and low noise three advantages of the internal avalanche multiplier effect can reach more than 120 times for laser ranging, speed, Angle, photoelectric detection and photoelectric countermeasure systems
This product is 0.4~1.1μm wavelength optical signal excellent detector, it has N + P-π P + access type structure, both high sensitivity, high speed response and low noise three advantages of the internal avalanche multiplier effect can reach more than 120 times for laser ranging, speed, Angle, photoelectric detection and photoelectric countermeasure systems


                            Photoelectric Properties                TA=22℃

Item

Mark

Unit

data

min

typical

max

1

Photosurface

Size

 

dia.

Ф

mm

 

0.8

 

area

A

mm2

 

0.5

 

2

Spectrum range

 

nm

400

 

1100

3

dark current

Id

nA

 

 

200

4

work voltage

Vopt

V

275

 

425

5

voltage T. Coeff.

K

V/

1.0

 

2.4

6

responsibility

1064nm

RV

V/W×105

1.1

2.0

 

900nm

RV

V/W×105

 

 

 

7

equivalent power

1064nm

NEP

PW/Hz1/2

 

0.19

0.29

900nm

NEP

PW/Hz1/2

 

 

 

8

response increase time

Tr

ns

 

2

4

9

reponse decrease time

Tf

ns

 

2

4

10

output impedance

 

Ω

 

25

50

11

Output bias

 

V

0.0

0.2

1.0

12

mains input

Vs

V

 

±5.0

 

13

supply current

+Is

mA

 

20

 

14

supply current

-Is

mA

 

10

 

15

work T.

Ta

-40

 

+70

16

max. reverse dark current

T

μA

 

 

0.2

17

max. light current

average value

IP

mA

 

 

2.5

peak value

IP

mA

 

 

10

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